XG035 dMode process will provide MPW, prototype design, and mass production services

Beijing, China, September 4, 2025- X-FAB Silicon Foundries ("X-FAB"), a globally recognized and outstanding analog/mixed signal wafer foundry, announced today that it has launched a silicon-based gallium nitride (GaN on Si) foundry service for dMode devices based on its XG035 technology platform, leveraging its expertise in GaN processing technology for high-power applications. This further enhances and strengthens X-FAB's advantages as a professional pure wafer foundry enterprise, and can now provide a complete set of processing technologies covering GaN and other wide bandgap semiconductor materials (including silicon carbide (SiC)), helping fabless semiconductor companies achieve design implementation.

8-inch GaN on Si wafers manufactured by X-FAB Dresden factory

X-FAB's GaN on Si technology is provided by its advanced 8-inch wafer fab located in Dresden, Germany. This factory is one of X-FAB's six major production bases operating globally, with a stable and reliable manufacturing environment that meets automotive industry certification standards. It is equipped with various professional processing equipment, measurement tools, and technologies, and has been optimized for GaN research and production, while also considering analog CMOS processes. It can provide thicker GaN on Si wafers that meet the needs of customers in the automotive, data center, industrial, renewable energy, medical, and other fields.

Thanks to years of deep accumulation in the field of high-voltage GaN technology, X-FAB has now extended its internal professional capabilities to GaN on Si foundry services for dMode devices, following the recent release of the open XG035 dMode process platform. This process includes dMode HEMT transistors commonly used in power conversion applications (with a voltage expandable range of 100V to 650V). In addition, X-FAB can also provide customized GaN technology and products, including dMode, eMode HEMT, and Schottky Barrier Diodes, which are widely used in high-frequency rectification, power systems, and solar panels.

The demand for charging equipment, electric vehicles, advanced energy management systems, and more powerful data centers continues to grow in the global market. In terms of data centers, the training and deployment of artificial intelligence (AI) have led to an increasing demand for computing power resources, which in turn has driven the demand for higher power and more efficient energy transmission and conversion technologies.

GaN on Si technology is a highly promising semiconductor process that enables high-frequency switching and low on resistance (Rds) between the drain and source. With its small size and high voltage processing capability, GaN on Si technology further improves X-FAB's wide bandgap chip process product line, enabling customers to design more efficient and energy-saving products from the power grid to automotive batteries, and even GPU levels.

We have over 30 years of experience in automotive grade CMOS technology, including 350nm CMOS processes, shared tools and equipment, and BEOL, which gives our GaN technology an inherent quality advantage and significantly reduces customer entry barriers. ”Michael Woittennek, CEO of X-FAB Dresden, said, "We have been developing customized technology for many years, and now we have opened the XG035 dMode technology platform for the general prototype design project at our Dresden factory located in the center of Saxony Silicon Valley. The flexibility of our 350nm toolkit also enables us to rapidly expand our mass production scale, providing customers with a fast and reliable path to market. ”

With the continuous evolution of GaN supplier landscape, X-FAB is gradually developing into a professional GaN foundry partner. ”Luigi Di Capua, Vice President of Product Marketing at X-FAB, added, "Our 8-inch GaN on Si platform can help customers ensure supply chain stability and scale up their designs without any concerns. ”

At present, X-FAB has launched a PDK that simplifies customer design processes and enables faster entry. In addition, starting from the fourth quarter of 2025, public MPW services will be opened up, allowing multiple customers to share a single silicon wafer for chip manufacturing. These measures will further lower the entry barriers for prototype design and small-scale production.